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Same model may have multiple batches, images only for reference.
2SA1939-O(Q)
Same model may have multiple batches, images only for reference.

2SA1939-O(Q)

Part No 2SA1939-O(Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans GP BJT PNP 80V 6A 3-Pin(3+Tab) TO-3PN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Collector Emitter Voltage (VCEO) 80 V
Lead Free Yes
RoHS Compliant
Win Source Part Number 1036627-2SA1939-O(Q)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SA1939-O(Q) CAD Model

Description

The 2SA1939-O(Q) is a high-quality RF transistor manufactured by Toshiba Semiconductor and Storage.

  • Popularity: Low-popularity transistor
  • Supply and Demand: Shortage
  • Collector-Emitter Voltage: 80V
  • Description: This transistor has a collector-emitter voltage of 80V and is an excellent choice for those who need a high-quality RF transistor for their electronic projects.

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