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Same model may have multiple batches, images only for reference.
2SA1972,F(J Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

2SA1972,F(J

Part No 2SA1972,F(J
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS PNP 500MA 400V TO226-3
Datasheet
2SA1972,F(J Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Polarity PNP
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 400V
Max Vce (sat) 1V @ 10mA, 100mA
Collector Cut-off Current(Max) 10μA (ICBO)
Typical Gain (hFE) (Min) 140 @ 20mA, 5V
Maximum Power Dissipation 900mW
Frequency - Transition 35MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-92MOD
Win Source Part Number 1004200-2SA1972,F(J
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SA1972,F(J CAD Model

Description

The Toshiba Semiconductor and Storage 2SA1972,F(J is a PNP polarity transistor with a maximum collector-emitter breakdown voltage of 400V.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Polarity: PNP
  • Collector-Emitter Breakdown Voltage: 400V
  • Power Dissipation: 900mW
  • Frequency Transition: 35MHz
  • Temperature Range: 150°C (TJ)
  • Win Source Part Number: 1004200.2SA1972,F(J
  • Package: TO-92MOD

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