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Same model may have multiple batches, images only for reference.
2SA2154CT-Y(TPL3) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

2SA2154CT-Y(TPL3)

Part No 2SA2154CT-Y(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS PNP 50V 0.1A
Datasheet
2SA2154CT-Y(TPL3) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel package
Part Status Obsolete(EOL)
Transistor Type PNP
Current - Collector (Ic) (Maximum) 100mA
Voltage - Collector Emitter Breakdown (Maximum) 50V
Vce Saturation (Maximum) @ Ib, Ic 300mV @ 10mA, 100mA
Current - Collector Cutoff (Maximum) 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 120 @ 2mA, 6V
Power - Max 100mW
Frequency - Transition 80MHz
Operating Temperature Range 150°C (TJ)
Mounting SMD
Package SC-101, SOT-883
Manufacturer Package CST3
Win Source Part Number 762434-2SA2154CT-Y(TPL3)
Popularity Medium
Supply and Demand Status Limited
Family Name 2SA2154CT-Y
Introduction Date March 27, 2005
ECCN EAR99
Country of Origin Japan, Thailand
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian 2SA2154CT-Y(TPL3) CAD Model

Description

The Toshiba Semiconductor and Storage 762434-2SA2154CT-Y(TPL3) transistor is a PNP type transistor.

  • Frequency Transition: 80MHz
  • Maximum Power: 100mW
  • Obsolete(EOL): Yes
  • Package: SC-101, SOT-883
  • Current - Collector (Ic) (maximum): 100mA
  • Voltage - Collector Emitter Breakdown (maximum): 50V
  • Vce Saturation (maximum) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (maximum): 100nA (ICBO)
  • DC Current Gain (hFE) (minimum) @ Ic, Vce: 120 @ 2mA, 6V
  • Discrete Semiconductor Products: Yes
  • CST3 Manufacturer Package: Yes
  • Limited Supply and Demand Status: Yes

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