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Same model may have multiple batches, images only for reference.
2SA949-O(TE6,F,M) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

2SA949-O(TE6,F,M)

Part No 2SA949-O(TE6,F,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS PNP 50MA 150V TO226-3
Datasheet
2SA949-O(TE6,F,M) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Type PNP
Current - Collector (Ic) (Maximum) 50mA
Voltage - Collector Emitter Breakdown (Maximum) 150V
Vce Saturation (Maximum) @ Ib, Ic 800mV @ 1mA, 10A
Current - Collector Cutoff (Maximum) 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 70 @ 10mA, 5V
Power - Max 800mW
Frequency - Transition 120MHz
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Package TO-226-3, TO-92-3 Long Body
Manufacturer Package TO-92MOD
Win Source Part Number 762443-2SA949-O(TE6,F,M)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SA949-O(TE6,F,M) CAD Model

Description

The Toshiba Semiconductor and Storage 762443-2SA949-O(TE6,F,M) is a PNP transistor.

  • Maximum Power: 800mW
  • Frequency Transition: 120MHz
  • Current Collector (Ic) Maximum: 50mA
  • Voltage Collector Emitter Breakdown Maximum: 150V
  • Package: TO-226-3, TO-92-3 long body
  • Operating Temperature Range: 150°C (TJ)
  • DC Current Gain (hFE) minimum @ Ic, Vce: 70 @ 10mA, 5V
  • Balanced Supply and Demand Status: Yes

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