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2SC1000-GR

Part No 2SC1000-GR
Manufacturer Toshiba Semiconductor and Storage
Catalog Custom Parts (0 - A)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1113394-2SC1000-GR
Categories Custom Parts
Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SC1000-GR CAD Model

Description

The 2SC1000-GR is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It is designed for low noise amplifier applications in VHF and UHF bands. This transistor is known for its high gain and low noise figure.

Applications

  • VHF/UHF Amplifiers: Used in radio frequency amplifiers for VHF and UHF communication equipment.
  • Low Noise Amplifiers (LNAs): Ideal for amplifying weak signals while minimizing added noise.
  • Oscillators: Employed in oscillator circuits for generating radio frequency signals.
  • Mixers: Used in mixer circuits for frequency conversion in radio receivers and transmitters.

Features

  • NPN Silicon Epitaxial Planar Transistor: Provides reliable and consistent performance.
  • Low Noise Figure: Ensures minimal noise addition in amplifier circuits.
  • High Gain: Offers high amplification for weak input signals.
  • High Transition Frequency (fT): Suitable for high-frequency applications.

Benefits

  • Improved Signal Reception: Low noise figure enhances the reception of weak signals in communication devices.
  • Enhanced Amplifier Performance: High gain provides strong amplification for various RF applications.
  • Reliable Operation: The silicon NPN structure ensures stable and consistent performance.
  • Versatile Use: Suitable for a wide range of RF applications, from amplifiers to oscillators.

Additional Details

The 2SC1000-GR has a collector-base voltage (VCBO) of 30V, a collector-emitter voltage (VCEO) of 20V, and an emitter-base voltage (VEBO) of 3V. The collector current (IC) is rated at 30mA, and the power dissipation (PC) is 200mW. The transition frequency (fT) is typically around 700 MHz. It is typically supplied in a small signal package like TO-92. Proper impedance matching is crucial to achieve optimal performance in RF circuits.

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