The 2SC1173 is an NPN silicon epitaxial transistor manufactured by Toshiba Semiconductor and Storage. It is designed for high-frequency amplifier applications, particularly in VHF and UHF bands. This transistor is known for its low noise figure and high gain, making it ideal for use in communication equipment and high-performance amplifiers.
Applications:
- VHF/UHF Amplifiers: Used in the front-end of VHF/UHF amplifiers to boost weak signals.
- Oscillators: Employed in oscillator circuits to generate high-frequency signals.
- Mixers: Utilized in mixer circuits for frequency conversion.
- Communication Equipment: Found in various communication devices such as radios and transceivers.
Features:
- High Transition Frequency (fT): Supports high-frequency operation.
- Low Noise Figure: Ensures minimal noise amplification in sensitive receiver circuits.
- High Gain: Provides significant signal amplification.
- NPN Silicon Epitaxial Transistor: Offers reliable and consistent performance.
Benefits:
- Improved Signal Reception: The low noise figure enhances the ability to receive weak signals.
- Efficient High-Frequency Amplification: High transition frequency and gain allow for efficient amplification.
- Versatile Application: Suitable for various high-frequency applications.
- Reliable Performance: Toshiba's manufacturing ensures consistent and durable operation.
The 2SC1173 typically comes in a small signal package suitable for high-frequency circuits. Its key specifications include a collector-base voltage (VCBO), a collector-emitter voltage (VCEO), and an emitter-base voltage (VEBO). Consult the datasheet for specific voltage and current ratings, as well as S-parameter data for high-frequency circuit design.