The 2SC3074 is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. This transistor is designed for high-frequency power amplification applications. It's commonly used in various RF (Radio Frequency) and microwave circuits due to its excellent gain and low noise characteristics.

Applications

• RF amplifiers
• Oscillators
• Mixers in communication equipment
• High-frequency power amplifiers
• Television tuners

Features

• High transition frequency (fT)
• Low noise figure
• High power gain
• Epitaxial planar structure for reliability
• NPN silicon transistor

Benefits

• Improved signal amplification in RF circuits
• Reduced noise interference
• Enhanced performance of communication devices
• Increased reliability and lifespan of electronic circuits
• Efficient power usage

Technical Specifications

The 2SC3074 transistor typically exhibits the following specifications:

• Collector-Base Voltage (VCBO): Typically around 30V
• Collector-Emitter Voltage (VCEO): Typically around 20V
• Emitter-Base Voltage (VEBO): Typically around 3V
• Collector Current (IC): Typically around 100mA
• Collector Dissipation (PC): Typically around 200mW
• Transition Frequency (fT): Typically around 2.0 GHz
• Noise Figure (NF): Typically around 2.5 dB
• Operating and Storage Temperature Range: -55°C to +150°C

The 2SC3074 is a versatile transistor suitable for a range of high-frequency applications. Its high transition frequency and low noise figure make it an excellent choice for use in sensitive receiver circuits, while its power amplification capabilities allow it to be used in transmitter circuits as well. The epitaxial planar structure ensures a high level of reliability and longevity, making it suitable for use in demanding applications. Its compact size also makes it well-suited for use in portable devices.