This electronic component is a Toshiba Semiconductor and Storage product with a frequency of 120 MHz and a polarity of NPN.

• Frequency: 120 MHz
• Polarity: NPN
• Power Dissipation: 1 W
• Pins: 3
• Category: RF Transistor (BJT)
• Alternative parts available: Yes
• RoHS Compliant: Yes
• Maximum Operating Temperature: 150 °C
• Mounting: Through hole
• Minimum Operating Temperature: -55 °C
• Collector Base Voltage (VCBO): 60 V
• Collector Emitter Voltage (VCEO): 50 V
• Emitter Base Voltage (VEBO): 5 V
• Maximum Collector Current: 5 A
• Radiation Hardened: No