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2SC3619(Q)

Part No 2SC3619(Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description Trans GP BJT NPN 300V 0.1A 3-Pin(3+Tab) TO-126IS
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 155897-2SC3619(Q)
Popularity Low
Supply and Demand Status Balance
Family Name 2SC3619
Introduction Date October 03, 1997
ECCN EAR99
Country of Origin Japan
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SC3619(Q) CAD Model

Description

Overview

The 2SC3619(Q) is an advanced variant within the 2SC3619 family, tailored to provide exceptional performance with improved high-frequency characteristics. This high-gain NPN transistor is optimized for radio frequency applications and offers enhanced operational reliability, making it suitable for demanding electronic circuits.

Features and Benefits

  • Enhanced Frequency Response: Specifically designed to handle higher frequencies efficiently, optimizing signal transmission and reception.
  • High Current Gain: Offers a high gain bandwidth product which is critical for amplifying weak signals.
  • Thermal Stability: Incorporates advanced thermal management features, ensuring consistent performance over prolonged use and varied temperature ranges.
  • Durable Construction: Promises extended operational life due to its sturdy build and resilient material composition.

Applications

  • RF Amplifiers: Ideal for RF amplification tasks, ensuring clear and reliable communication signals.
  • Oscillator Circuits: Utilized in oscillator designs requiring stable frequency generation.
  • Wireless Communication Devices: Integrated into devices for enhanced signal processing and amplification.
  • Broadcast Equipment: A preferred choice for sound and signal amplification in broadcasting equipment.

Additional Details

The 2SC3619(Q) is distinct for its combination of power efficiency and performance reliability, catering to a broad spectrum of electronic applications. It allows seamless performance in circuits with its low collector-emitter saturation voltage, yielding higher efficiency. Professionals in the field of electronics engineering leverage its capabilities to build robust and efficient signal processing systems. Due to its enhanced features, it acts as a crucial component for improving communication technology.

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