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Same model may have multiple batches, images only for reference.
2SC5242-O(Q) Real Image
Same model may have multiple batches, images only for reference.

2SC5242-O(Q)

Part No 2SC5242-O(Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS NPN 230V 15A TO-3PN
Datasheet
2SC5242-O(Q) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube
Transistor Type NPN
Current - Collector (Ic) (Maximum) 15A
Voltage - Collector Emitter Breakdown (Maximum) 230V
Vce Saturation (Maximum) @ Ib, Ic 3V @ 800mA, 8A
Current - Collector Cutoff (Maximum) 5μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 80 @ 1A, 5V
Power - Max 130W
Frequency - Transition 30MHz
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Package TO-3P-3, SC-65-3
Manufacturer Package TO-3P(N)
Win Source Part Number 762702-2SC5242-O(Q)
Popularity Medium
Supply and Demand Status Balance
Family Name 2SC5242-O
Introduction Date February 21, 1997
ECCN EAR99
Country of Origin China, Japan
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian 2SC5242-O(Q) CAD Model

Description

The Toshiba Semiconductor and Storage 762702-2SC5242-O(Q) is an NPN transistor type electronic component.

  • Power - Max: 130W
  • Frequency - Transition: 30MHz
  • Package: TO-3P-3, SC-65-3
  • Manufacturer Package: TO-3P(N)
  • Current - Collector (Ic) (Maximum): 15A
  • Voltage - Collector Emitter Breakdown (Maximum): 230V
  • Vce Saturation (Maximum) @ Ib, Ic: 3V @ 800mA, 8A
  • Current - Collector Cutoff (Maximum): 5μA (ICBO)
  • DC Current Gain (hFE) (Minimum) @ Ic, Vce: 80 @ 1A, 5V
  • Supply: Balance
  • Estimated EOL Date: 2026

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