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2SC5086-O(TE85L)

Part No 2SC5086-O(TE85L)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans RF BJT NPN 12V 0.08A 3-Pin SSM T/R
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 156892-2SC5086-O(TE85L)
Popularity Low
Supply and Demand Status Limited
Family Name 2SC5086O
Introduction Date October 21, 1997
ECCN EAR99
Country of Origin Japan, Thailand
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SC5086-O(TE85L) CAD Model

Description

Overview of 2SC5086-O(TE85L) Bipolar Transistor

The 2SC5086-O(TE85L) is an NPN bipolar junction transistor (BJT) known for its high current gain and reliability. Its compact design makes it ideal for electronic applications requiring small form factors. With a maximum collector current of 1.5A and a voltage rating of 50V, this transistor is suitable for various switching and amplification tasks.

Applications

  • Audio Amplification Circuits
  • Signal Processing
  • Switching Applications
  • Consumer Electronics
  • Telecommunications Equipment

Features and Benefits

  • High DC Current Gain: Offers efficient performance in amplification tasks.
  • Compact Package: The TE85L packaging is suitable for space-constrained applications.
  • Low Power Consumption: Reduces energy usage in power-sensitive projects.
  • Reliability: Provides consistent performance under varying environmental conditions.

Additional Details

This component features a complimentary construction, making it compatible with various pairing transistors. The 2SC5086-O(TE85L) is often utilized in designs requiring stable DC biasing and high switching capability. Furthermore, its thermal stability makes it a preferred choice for use in applications exposed to moderate temperature ranges. It is RoHS compliant, underscoring its suitability for eco-friendly projects.

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