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Same model may have multiple batches, images only for reference.
2SC5353(Q)
Same model may have multiple batches, images only for reference.

2SC5353(Q)

Part No 2SC5353(Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans GP BJT NPN 800V 3A 3-Pin(3+Tab) TO-220NIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-220
Collector Base Voltage (VCBO) 900 V
Collector Emitter Saturation Voltage 1 V
Collector Emitter Voltage (VCEO) 800 V
Element Configuration Single
Emitter Base Voltage (VEBO) 7 V
Height 8.1 mm
Lead Free Yes
Length 10 mm
Max Collector Current 3 A
Maximum Operating Temperature 150 °C
Max Power Dissipation 2 W
Mount Through Hole
Number of Elements 1
Number of Pins 3
Polarity NPN
Power Dissipation 2 W
Radiation Hardening No
RoHS Compliant
Width 4.5 mm
Win Source Part Number 1037225-2SC5353(Q)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SC5353(Q) CAD Model

Description

The Toshiba Semiconductor and Storage 2SC5353(Q) is a high-quality RF transistor.

  • Popularity: Low
  • Supply and Demand Status: Shortage
  • Maximum Power Dissipation: 2W
  • Collector-Emitter Voltage: 800V

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