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Same model may have multiple batches, images only for reference.
2SD1222Q
Same model may have multiple batches, images only for reference.

2SD1222Q

Part No 2SD1222Q
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans Darlington NPN 40V 3A 3-Pin(2+Tab) New PW-Mold
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Collector Base Voltage (VCBO) 60 V
Collector Emitter Saturation Voltage 1.5 V
Collector Emitter Voltage (VCEO) 40 V
Element Configuration Single
Emitter Base Voltage (VEBO) 5 V
Height 2.3 mm
Lead Free Lead Free
Length 6.5 mm
Max Collector Current 3 A
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 3
RoHS Compliant
Width 5.5 mm
Win Source Part Number 1165652-2SD1222Q
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SD1222Q CAD Model

Description

The Toshiba Semiconductor and Storage 1165652-2SD1222Q is an RF transistor that comes in a surface mount package.

  • Pins: 3
  • Length: 6.5mm
  • Width: 5.5mm
  • Height: 2.3mm
  • Collector-Base Voltage: 60V
  • Collector-Emitter Voltage: 40V
  • Emitter-Base Voltage: 5V
  • Maximum Collector Current: 3A
  • Collector-Emitter Saturation Voltage: 1.5V
  • Operating Temperature: -55°C to 150°C
  • Supply and Demand: Limited

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