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2SD686

Part No 2SD686
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description Trans Darlington NPN 80V 4A 30000mW 3-Pin(3+Tab) TO-220AB
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 158295-2SD686
Popularity Low
Supply and Demand Status Sufficient
Family Name 2SD686
Introduction Date March 04, 2008
ECCN EAR99
Estimated EOL Date Not Applicable
Ultra Librarian 3D Model Ultra Librarian 2SD686 CAD Model

Description

The 2SD686 is an NPN power transistor revered for its efficiency in power amplification tasks. It is an optimal choice for users seeking a component with high breakdown voltages suitable for robust audio applications and general power-driven circuit designs.

Features and Benefits

  • High Collector-Emitter Voltage: Capable of handling voltages up to 120V, ideal for high-demand voltage environments.
  • Considerable Current Capability: A collector current rating of up to 3A, suited for high-power applications.
  • Enhanced Thermal Design: Housed in a well-ventilated TO-126 package for efficient heat dissipation.
  • Stable Gain Characteristics: Offers a DC current gain range (hFE) from 40 to 320, enabling diverse amplification roles.

Applications

  • Audio Power Amplification
  • High-Frequency Driver Applications
  • Inverter Circuits
  • Switch Mode Power Supplies

The 2SD686 is suitable for large-scale audio amplification setups, renewable energy projects such as power inverters, and high-frequency technology advancements.

In essence, the 2SD686 merges strength with performance, rendering it an efficient solution for diverse, high-performance circuit applications that demand substantial voltage and current reliability.

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