The 2SK1828 TE85L is an N-channel silicon MOSFET from Toshiba Semiconductor and Storage, designed for high-frequency power amplifier applications. This transistor is known for its excellent power gain and low noise figure, making it suitable for various RF applications. The TE85L designation refers to the specific packaging and taping options for automated assembly processes.

Applications:

• RF power amplifiers
• High-frequency oscillators
• VHF/UHF communication equipment
• Wireless LAN devices
• Mobile communication systems

Features:

• N-channel MOSFET
• High power gain
• Low noise figure
• High breakdown voltage
• Excellent linearity
• Surface mount package (TE85L)

Benefits:

• Improved signal amplification in RF circuits
• Reduced noise in sensitive receiver applications
• Enhanced overall system performance
• Ease of integration into automated assembly lines due to surface mount package
• Increased reliability and longevity of RF devices

Additional Details:

The 2SK1828 TE85L features a typical drain-source voltage (VDS) rating suitable for various RF power amplifier designs. The gate-source voltage (VGS) is also specified to ensure proper biasing and operation. The device is characterized by its high transconductance, which contributes to its high power gain. The input and output capacitances are optimized for impedance matching in RF circuits. The operating temperature range is suitable for typical electronic equipment environments. Its compact surface-mount package reduces the overall size of the application circuit. It uses silicon as its base material, processed and packaged to yield a reliable component. This MOSFET’s characteristics make it a suitable choice for designers working with RF and high-frequency circuits who require a balance of gain, noise performance, and ease of assembly.