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2SK1829

Part No 2SK1829
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 1127130-2SK1829
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SK1829 CAD Model

Description

The 2SK1829 is an N-channel MOS Field Effect Transistor (MOSFET) designed for RF amplification and switching applications, manufactured by Toshiba Semiconductor and Storage. It's specifically tailored for high-frequency performance, making it suitable for use in communication equipment and other RF-based systems.

Applications

  • RF Amplifiers in communication devices
  • Oscillators
  • Mixers
  • High-speed switching circuits
  • VHF/UHF Transmitters and Receivers

Features

  • N-Channel MOSFET: Offers efficient amplification and switching capabilities.
  • High Transition Frequency (fT): Enables excellent performance at high frequencies.
  • Low Input Capacitance: Minimizes signal loading and improves high-frequency response.
  • High Power Gain: Provides significant signal amplification.
  • Small Package Size: Allows for compact circuit designs.

Benefits

  • Improved RF Performance: Delivers enhanced signal amplification and switching in high-frequency applications.
  • Increased Circuit Efficiency: Minimizes power consumption in RF circuits.
  • Reduced Signal Loss: Optimizes signal transmission and reception.
  • Compact Design: Enables miniaturization of RF equipment.
  • Enhanced Reliability: Ensures stable and consistent performance in demanding RF environments.

Additional Details

The 2SK1829's key specifications typically include its drain-source voltage (VDS), gate-source voltage (VGS), drain current (ID), and power dissipation. The transition frequency (fT) is a critical parameter for RF applications, indicating the frequency at which the transistor's gain drops to unity. Input and output capacitance values are also important for impedance matching and circuit design.

The MOSFET is usually housed in a small outline package (SOT) or similar, designed for surface mounting on printed circuit boards. Proper biasing is essential for optimal performance and linearity in RF amplifier applications. Impedance matching networks are typically required to maximize power transfer and minimize signal reflections.

Careful attention should be paid to thermal management to prevent overheating and ensure long-term reliability. Heatsinking may be necessary in high-power applications. Consult the manufacturer's datasheet for detailed electrical characteristics, application notes, and recommended operating conditions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
345+ $0.1686 $58.1670
835+ $0.1386 $115.7310
1,295+ $0.1340 $173.5300
1,790+ $0.1294 $231.6260
2,295+ $0.1259 $288.9405
3,095+ $0.1120 $346.6400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,900 pieces
MOQ: 345 pcs
Order Increment : 1 pcs
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