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2SK2145-Y(TE85L,F)

Part No 2SK2145-Y(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog JFETs (Junction Field Effect)
Description MOSFET 2N-CH JFET 50V SMV
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
Current - Drain (Idss) @ Vds (Vgs=0) 1.2mA @ 10V
Voltage - Cutoff (VGS off) @ Id 200mV @ 100nA
Max Input Capacitance 13pF @ 10V
Maximum Power Dissipation 300mW
Temperature Range - Operating 125°C (TJ)
Mounting SMD (SMT)
Case / Package SMV
Win Source Part Number 132091-2SK2145-Y(TE85L,F)
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SK2145-Y(TE85L,F) CAD Model

Description

Product Overview

The 2SK2145-Y(TE85L,F) is an N-channel MOSFET optimized for high-efficiency and rapid switching applications. It integrates cutting-edge manufacturing techniques to achieve superior performance and reliability, making it a preferred choice for innovative electronic circuits.

Features and Benefits

  • Highly Efficient: Facilitates effective power regulation and distribution, which contributes to extended device longevity.
  • Low Drain-Source On-Resistance: Enables efficient current flow, reducing power losses.
  • Fast Switching Capability: Ideal for applications requiring quick operational changes.
  • Space-Efficient Design: Perfect for scenarios where space is at a premium.

Applications

This MOSFET is adaptable for use in areas such as:

  • Power supply modules
  • Home automation devices
  • Audio amplifiers
  • Digital signal processing
  • Robotics controls

Additional Details

Engineered to operate reliably in diverse environments, the 2SK2145-Y(TE85L,F) is distinguished by its capacity to provide sustained high performance while consuming minimal power. This MOSFET is specifically crafted to meet the evolving demands of today's advanced electronics, making it indispensable in the toolkit of modern engineers and inventors.

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