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Same model may have multiple batches, images only for reference.
2SK2606(F)
Same model may have multiple batches, images only for reference.

2SK2606(F)

Part No 2SK2606(F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 800V 8A 3-Pin(3+Tab) TO-3P(N)IS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 8 A
Drain to Source Breakdown Voltage 800 V
Drain to Source Resistance 1.2 Ω
Drain to Source Voltage (Vdss) 800 V
Element Configuration Single
Fall Time 25 ns
Gate to Source Voltage (Vgs) 30 V
Input Capacitance 2.16 nF
Maximum Operating Temperature 150 °C
Max Power Dissipation 85 W
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Power Dissipation 85 W
Radiation Hardening No
Rds On Max 1.2 Ω
Rise Time 25 ns
RoHS Compliant
Win Source Part Number 1037713-2SK2606(F)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SK2606(F) CAD Model

Description

The Toshiba Semiconductor and Storage 1037713-2SK2606(F) is a transistor-FET product that has a drain to source voltage (Vdss) of 800 V.

  • Drain to source voltage (Vdss): 800 V
  • Configuration: single element configuration
  • Input capacitance: 2.16 nF
  • Power dissipation: 85 W
  • Number of pins: 3
  • Rise time: 25 ns
  • Fall time: 25 ns
  • RoHS compliance: RoHS compliant
  • Maximum operating temperature: 150 °C
  • Supply and demand status: shortage

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