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Same model may have multiple batches, images only for reference.
2SK2611(F)
Same model may have multiple batches, images only for reference.

2SK2611(F)

Part No 2SK2611(F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 9 A
Drain to Source Voltage (Vdss) 900 V
Dual Supply Voltage 900 V
Gate to Source Voltage (Vgs) 30 V
Lead Free Yes
Lead Pitch 5.45 mm
Maximum Operating Temperature 150 °C
Max Power Dissipation 150 W
Min Operating Temperature -55 °C
Mount Through Hole
Nominal Vgs 4 V
Number of Elements 1
Number of Pins 3
Power Dissipation 150 W
Radiation Hardening No
REACH SVHC Unknown
RoHS Compliant
Termination Through Hole
Threshold Voltage 4 V
Win Source Part Number 1037715-2SK2611(F)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SK2611(F) CAD Model

Description

The Toshiba Semiconductor and Storage 2SK2611(F) is a through-hole mounted transistor with a drain to source voltage (Vdss) of 900V.

  • Drain to source voltage (Vdss): 900V
  • Power dissipation: 150W
  • Continuous drain current (ID): 9A
  • Gate to source voltage (Vgs): 30V
  • Threshold voltage: 4V
  • Popularity: low popularity rating
  • Supply and demand status: shortage
  • RoHS compliance: lead-free and RoHS compliant
  • Mounting: through-hole

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Quantity Unit Price Ext. Price
12+ $4.8972 $58.7664
29+ $4.0182 $116.5278
45+ $3.8924 $175.1580
62+ $3.7665 $233.5230
80+ $3.6417 $291.3360
107+ $3.2652 $349.3764
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Availability: 4,170 pieces
MOQ: 12 pcs
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