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Same model may have multiple batches, images only for reference.
2SK3313(Q)
Same model may have multiple batches, images only for reference.

2SK3313(Q)

Part No 2SK3313(Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors – FETs, MOSFETs – Single
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 620mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2040 pF @ 10 V
Power Dissipation (Max) 40W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220NIS
Package / Case TO-220-3 Full Pack
Ultra Librarian 3D Model Ultra Librarian 2SK3313(Q) CAD Model

Description

MOSFET N-CH 500V 12A TO220NIS

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