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Same model may have multiple batches, images only for reference.
2SK3799(Q,M)
Same model may have multiple batches, images only for reference.

2SK3799(Q,M)

Part No 2SK3799(Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220NIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Case / Package TO-220-3
Continuous Drain Current (ID) 8 A
Drain to Source Voltage (Vdss) 900 V
Fall Time 20 ns
Gate to Source Voltage (Vgs) 30 V
Input Capacitance 2.2 nF
Max Operating Temperature 150 °C
Max Power Dissipation 50 W
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Packaging Bulk
Power Dissipation 50 W
Radiation Hardening No
Rds On Max 1.3 Ω
Rise Time 25 ns
RoHS Compliant
Win Source Part Number 1204018-2SK3799(Q,M)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SK3799(Q,M) CAD Model

Description

The Toshiba Semiconductor and Storage 2SK3799(Q,M) is a transistor-FET that is designed for RF applications.

  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Drain to Source Voltage (Vdss): 900 V
  • Input Capacitance: 2.2 nF
  • Power Dissipation: 50 W
  • Number of Pins: 3
  • Rise Time: 25 ns
  • Fall Time: 20 ns
  • Gate to Source Voltage (Vgs): 30 V
  • Rds On Max: 1.3 Ω
  • Minimum Operating Temperature: -55°C
  • Maximum Operating Temperature: 150°C

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