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Same model may have multiple batches, images only for reference.
2SK4014(Q)
Same model may have multiple batches, images only for reference.

2SK4014(Q)

Part No 2SK4014(Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 900V 6A 3-Pin(3+Tab) TO-220SIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-220-3
Continuous Drain Current (ID) 6 A
Drain to Source Resistance 2 Ω
Drain to Source Voltage (Vdss) 600 V
Fall Time 60 ns
Gate to Source Voltage (Vgs) 30 V
Height 8.1 mm
Input Capacitance 1.3 nF
Lead Free Yes
Length 10 mm
Maximum Operating Temperature 150 °C
Max Power Dissipation 65 W
Min Operating Temperature -55 °C
Mount Through Hole
Nominal Vgs 4 V
Number of Elements 1
Number of Pins 3
Power Dissipation 45 W
Radiation Hardening No
Rds On Max 1.25 Ω
Rise Time 25 ns
RoHS Compliant
Width 4.5 mm
Win Source Part Number 1037834-2SK4014(Q)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SK4014(Q) CAD Model

Description

The 1037834-2SK4014(Q) is a field-effect transistor (FET) that belongs to the Transistors - FETs, MOSFETs - RF category of electronic components.

  • Maximum Operating Temperature: 150 °C
  • Packaging Type: TO-220-3
  • Mounting: Through Hole
  • Drain to Source Voltage (Vdss): 600 V
  • Continuous Drain Current (ID): 6 A
  • Supply and Demand Status: Shortage

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