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DF3A6.8LSU

Part No DF3A6.8LSU
Manufacturer Toshiba Semiconductor and Storage
Catalog TVS - Diodes
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 13+
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 737888-DF3A6.8LSU
Popularity Low
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DF3A6.8LSU CAD Model

Description

The DF3A6.8LSU is a Transient Voltage Suppressor (TVS) diode manufactured by Toshiba Semiconductor and Storage. It's designed to protect sensitive electronic components from voltage transients induced by events like electrostatic discharge (ESD), inductive switching, and lightning strikes. This diode swiftly clamps overvoltages, diverting excess current away from protected circuits.

Applications:

  • ESD protection for portable electronics such as smartphones and tablets
  • Overvoltage protection for communication interfaces like USB and HDMI
  • Surge protection for industrial control systems
  • Protection for automotive electronics
  • General transient voltage suppression in electronic devices

Features:

  • Low clamping voltage for effective protection
  • Fast response time for quick transient suppression
  • Small surface mount package for space-saving designs
  • High surge current capability for robust protection
  • Low leakage current to minimize power consumption

Benefits:

  • Protects sensitive electronic devices from damage caused by voltage surges
  • Enhances system reliability and prevents downtime
  • Extends the lifespan of electronic equipment
  • Reduces the risk of component failure
  • Complies with industry standards for ESD and surge protection

Detailed Specifications:

Key specifications for the DF3A6.8LSU include:

  • Reverse Stand-Off Voltage: Approximately 6.8V, representing the maximum voltage the diode can withstand without conducting significantly.
  • Clamping Voltage: The voltage to which the diode limits during a surge event. This value varies with the surge current.
  • Peak Pulse Current: The maximum surge current the device can handle without failure, often tested according to industry standards like IEC 61000-4-2 (ESD) and IEC 61000-4-5 (Surge).
  • Junction Capacitance: Important for high-speed data lines; a lower capacitance minimizes signal distortion.
  • Package: Typically available in a small surface-mount package for easy integration into compact designs.

Always consult the official Toshiba Semiconductor and Storage datasheet for precise electrical characteristics, test conditions, and package dimensions. The DF3A6.8LSU provides effective transient voltage protection in a compact form factor.

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