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Same model may have multiple batches, images only for reference.
GT50J341,Q Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

GT50J341,Q

Part No GT50J341,Q
Manufacturer Toshiba Semiconductor and Storage
Catalog IGBTs - Single
Description PB-F IGBT / TRANSISTOR TO-3PN IC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Toshiba Semiconductor and Storage
Package Tube
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 50 A
Current - Collector Pulsed (Icm) 100 A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 50A
Power - Max 200 W
Input Type Standard
Temperature Range - Operating 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P(N)
Standard Package 50 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 139240-GT50J341,Q
Ultra Librarian 3D Model Ultra Librarian GT50J341,Q CAD Model

Description

The 139240-GT50J341,Q is a single IGBT transistor in the Discrete Semiconductor Products category. It is designed for high power applications with a maximum power rating of 200 W.

  • Voltage Breakdown: 600 V
  • Maximum Collector Current: 50 A
  • Vce(on): 2.2V @ 15V, 50A
  • Mounting Type: Through Hole
  • Package: TO-3P-3, SC-65-3
  • Manufacturer: Toshiba Semiconductor and Storage
  • Status: Active

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