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Same model may have multiple batches, images only for reference.
GT60M303N Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

GT60M303N

Part No GT60M303N
Manufacturer Toshiba Semiconductor and Storage
Catalog IGBTs - Single
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family IGBTs - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 269861-GT60M303N
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian GT60M303N CAD Model

Description

The GT60M303N is an IGBT (Insulated Gate Bipolar Transistor) manufactured by Toshiba Semiconductor and Storage.

  • Type: Single IGBT
  • Popularity: High
  • Application: Electronic switch in high-voltage and high-current applications such as in motor drivers, power supplies, and inverters.
  • Features: Reliable and efficient, designed to handle high power and voltage applications.

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