The Toshiba Semiconductor and Storage transistor is a NPN/PNP polarity transistor with a maximum collector-emitter breakdown voltage of 50V and a maximum current collector of 150mA. It has a typical gain of 120 at 2mA and 6V. The frequency transition is 120MHz and the maximum power dissipation is 200mW. It is packaged in a US6 case and has a maximum collector-emitter saturation voltage of 300mV at 10mA and 100mA. The collector cut-off current is 100nA and the operating temperature range is 125°C (TJ). This transistor is a part of the Discrete Semiconductor Products category and is in active status.