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Same model may have multiple batches, images only for reference.
HN2C01FU-Y Real Image
Same model may have multiple batches, images only for reference.

HN2C01FU-Y

Part No HN2C01FU-Y
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 50V 0.15A US6
Datasheet
HN2C01FU-Y Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN (Dual)
Maximum Current Collector 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 250mV @ 10mA, 100mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 120 @ 2mA, 6V
Maximum Power Dissipation 200mW
Frequency - Transition 80MHz
Temperature Range - Operating 125°C (TJ)
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 117349-HN2C01FU-Y
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HN2C01FU-Y CAD Model

Description

The Toshiba Semiconductor and Storage HN2C01FU-Y is a dual NPN transistor. It is an active product with a medium popularity and a balanced supply and demand status. It is manufactured by Toshiba Semiconductor and Storage and has a Win Source Part Number of 117349-HN2C01FU-Y. This transistor has a maximum collector-emitter breakdown voltage of 50V and a maximum power dissipation of 200mW. It operates at a temperature range of 125°C (TJ) and has a typical gain (hFE) of 120 @ 2mA, 6V.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,175+ $0.0266 $57.8550
5,265+ $0.0219 $115.3035
7,895+ $0.0219 $172.9005
11,115+ $0.0208 $231.1920
13,890+ $0.0208 $288.9120
18,750+ $0.0185 $346.8750
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Availability: 19,575 pieces
MOQ: 2175 pcs
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