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Same model may have multiple batches, images only for reference.
HN4K03JUTE85LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

HN4K03JUTE85LF

Part No HN4K03JUTE85LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 0.1A USV
Datasheet
HN4K03JUTE85LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V
Max Input Capacitance 8.5pF @ 3V
Maximum Gate-Source Voltage 10V
Power Dissipation (Max) 200mW (Ta)
Maximum Rds On at Id,Vgs 12 Ohm @ 10mA, 2.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package USV
Dimension 5-TSSOP, SC-70-5, SOT-353
Win Source Part Number 096393-HN4K03JUTE85LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HN4K03JUTE85LF CAD Model

Description

The Toshiba Semiconductor and Storage HN4K03JUTE85LF is an N-channel MOSFET with a power dissipation of 200mW and a drain-source breakdown voltage of 20V. The device has a continuous drain current of 100mA and a maximum Rds On of 12 Ohm at 10mA, 2.5V. It has a maximum gate-source voltage of 10V and a maximum input capacitance of 8.5pF at 3V. in the open market. The supply and demand status is sufficient. The device is obsolete (EOL) and has a temperature range of 150°C (TJ). It is supplied in a USV package with a dimension of 5-TSSOP, SC-70-5, SOT-353.

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