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JDP2S12CR(TE85L,QM

Part No JDP2S12CR(TE85L,QM
Manufacturer Toshiba Semiconductor and Storage
Catalog Misc Products
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Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 826460-JDP2S12CR(TE85L,QM
Ultra Librarian 3D Model Ultra Librarian JDP2S12CR(TE85L,QM CAD Model

Description

The JDP2S12CR(TE85L,QM is a Schottky Barrier Diode manufactured by Toshiba Semiconductor and Storage. It is likely a variant of the JDP2S12CR(TE85L, with the ',QM' suffix possibly indicating specific testing, quality, or packaging requirements. Schottky diodes are known for their low forward voltage drop and fast switching speed, making them ideal for applications such as power supplies, rectification, and high-frequency circuits.

Applications:

  • Power Supplies: Used for efficient rectification of AC to DC voltage.
  • DC-DC Converters: Improves the efficiency of voltage conversion in DC-DC converters.
  • Reverse Polarity Protection: Prevents damage to circuits from reversed power supply connections.
  • High-Frequency Rectification: Suitable for rectifying signals in high-frequency applications.
  • Switching Mode Power Supplies (SMPS): Used in various SMPS designs for efficient power conversion.
  • Solar Panel Bypass Diodes: Protects solar cells from reverse current flow and hot-spot formation.

Features:

  • Low Forward Voltage Drop (VF): Minimizes power loss and increases circuit efficiency.
  • Fast Switching Speed: Enables high-frequency operation and reduces switching losses.
  • Small Surface Mount Package: Allows for compact and high-density circuit designs.
  • High Surge Current Capability: Can withstand high current surges without failure.
  • Pb-Free (RoHS Compliant): Environmentally friendly and compliant with RoHS standards.

Benefits:

  • Improved Efficiency: The low forward voltage drop reduces power dissipation.
  • Faster Switching: The fast switching speed allows for higher operating frequencies.
  • Reduced Heat Generation: Lower power dissipation leads to less heat generation, improving reliability.
  • Space Saving: The small package size enables compact designs.
  • Environmentally Friendly: RoHS compliance ensures the product is free of hazardous substances.

Specifications (General - May Vary):

The exact specifications will depend on the specific diode model. Refer to the Toshiba Semiconductor and Storage datasheet for JDP2S12CR(TE85L,QM for precise specifications.

Typically includes:

  • Repetitive Peak Reverse Voltage (VRRM): e.g., 30V (example)
  • Average Forward Current (IF(AV)): e.g., 2A (example)
  • Forward Voltage (VF): e.g., 0.5V (example)
  • Reverse Current (IR): e.g., 1mA (example)
  • Operating Temperature Range: e.g., -40°C to +125°C (example)
  • Package Type: e.g., SOD-123 (example)

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.3634 $50.4510
37+ $2.7597 $102.1089
57+ $2.6735 $152.3895
78+ $2.5872 $201.8016
100+ $2.5010 $250.1000
134+ $2.2423 $300.4682
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