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JDP2S12CR(TE85L

Part No JDP2S12CR(TE85L
Manufacturer Toshiba Semiconductor and Storage
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Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 826459-JDP2S12CR(TE85L
Ultra Librarian 3D Model Ultra Librarian JDP2S12CR(TE85L CAD Model

Description

The JDP2S12CR(TE85L is a Schottky Barrier Diode manufactured by Toshiba Semiconductor and Storage. Schottky diodes are characterized by their low forward voltage drop and fast switching speed, making them suitable for various applications in power supplies, rectification, and signal processing.

Applications:

  • Power Supplies: Used as rectifiers to convert AC voltage to DC voltage.
  • DC-DC Converters: Improves efficiency in DC-DC conversion circuits.
  • Reverse Polarity Protection: Protects circuits from damage due to incorrect polarity connection.
  • High-Frequency Rectification: Efficient rectification in high-frequency applications.
  • Switching Power Supplies: Found in various switching power supply designs.
  • Solar Power Systems: Used in solar panel systems to prevent reverse current flow.

Features:

  • Low Forward Voltage Drop: Reduces power dissipation and improves efficiency.
  • Fast Switching Speed: Enables high-frequency operation.
  • Small Package Size: Allows for compact circuit designs.
  • High Surge Current Capability: Withstands transient current surges.
  • Surface Mount Device (SMD): Suitable for automated assembly.

Benefits:

  • Increased Efficiency: Low forward voltage drop minimizes power losses.
  • Improved Switching Performance: Fast switching speed enables higher operating frequencies.
  • Reduced Heat Dissipation: Lower power dissipation results in less heat generation.
  • Enhanced Reliability: Designed for robust performance in demanding applications.
  • Compact Design: Small package size allows for miniaturization of electronic devices.

Specifications (General - May Vary):

The exact specifications will vary depending on the specific diode. Refer to the Toshiba Semiconductor and Storage datasheet for JDP2S12CR(TE85L for precise details.

Typically includes:

  • Repetitive Peak Reverse Voltage (VRRM): e.g., 30V (example)
  • Average Forward Current (IF(AV)): e.g., 2A (example)
  • Forward Voltage (VF): e.g., 0.5V at IF=2A (example)
  • Reverse Current (IR): e.g., 1mA at VR=30V (example)
  • Operating Junction Temperature (Tj): e.g., 125°C (example)
  • Package: e.g., SOD-123 (example)

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