The Toshiba K10A60D is an N-channel MOSFET transistor that is designed for use in high voltage switching applications.

• Maximum Power Dissipation: It has a maximum power dissipation of 45W
• Drain-Source Breakdown Voltage: and a drain-source breakdown voltage of 600V.
• Maximum Continuous Drain Current: The maximum continuous drain current @ 25°C is 10A.
• Gate-Source Threshold Voltage: The gate-source threshold voltage is 4V @ 1mA,
• Maximum Gate Charge: and the maximum gate charge is 25nC @ 10V.
• Maximum Input Capacitance: The maximum input capacitance is 1350pF @ 25V.
• Package: The K10A60D comes in a TO-220SIS package and has a maximum operating temperature of 150°C.
• Applications: This MOSFET transistor is suitable for use in a wide range of applications, including power supplies, motor control, and lighting control.