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Same model may have multiple batches, images only for reference.
K12J60U Real Image
Same model may have multiple batches, images only for reference.

K12J60U

Part No K12J60U
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 12A TO-3PN
Datasheet
K12J60U Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1mA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 720pF @ 10V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 144W (Tc)
Maximum Rds On at Id,Vgs 400 mOhm @ 6A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P(N)
Dimension TO-3P-3, SC-65-3
Win Source Part Number 070335-K12J60U
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian K12J60U CAD Model

Description

The K12J60U is a MOSFET from Toshiba Semiconductor and Storage. It is a polarity N-Channel device that can handle a power dissipation of up to 144W (Tc).

  • Mounted using: the Through Hole technology
  • Package: TO-3P(N)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 12A (Ta)
  • Gate-Source Threshold Voltage: 5V @ 1mA
  • Maximum Rds On @ Id,Vgs: 400 mOhm @ 6A, 10V
  • Supply and demand status: limited.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $59.4178 $59.4178
3+ $48.7526 $146.2578
4+ $47.2291 $188.9164
6+ $45.7057 $274.2342
7+ $44.1822 $309.2754
9+ $39.6119 $356.5071
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,300 pieces
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