The Toshiba Semiconductor and Storage 205807-K4A53D is a MOSFET used in various applications.

• GPTDescription: It is a medium popularity product with a balanced supply and demand status.
• GPTDescription: It is a high-quality product manufactured by Toshiba Semiconductor and Storage, known for its reliability and durability.
• GPTDescription: The product has a power dissipation (max) of 35W (Tc) and a drive voltage (max Rds On, Min Rds On) of 10V.
• GPTDescription: The product is active and has a temperature range of 150°C (TJ).
• GPTDescription: It comes in a TO-220SIS package and has a drain-source breakdown voltage of 525V.
• GPTDescription: The continuous drain current @ 25°C is 4A (Ta).
• GPTDescription: The gate-source threshold voltage is 4.4V @ 1mA, and the maximum gate charge is 11nC @ 10V.
• GPTDescription: The maximum input capacitance is 490pF @ 25V, and the maximum gate-source voltage is ±30V.