The K80A08K3 is an N-channel power MOSFET from Toshiba Semiconductor and Storage. It is designed for high-efficiency power switching applications.

Applications

• DC-DC converters
• AC-DC power supplies
• Motor control
• LED lighting
• Load switches

Features

• Drain-Source Voltage (V<sub>DSS): 80V
• Continuous Drain Current (I<sub>D): 80A
• On-Resistance (R<sub>DS(on)): 6.3 mΩ (typical)
• Gate Threshold Voltage (V<sub>GS(th)): 2.0-4.0V
• Low gate charge
• Avalanche ruggedness

Benefits

• High efficiency due to low on-resistance, minimizing power losses.
• High current handling capability suitable for demanding applications.
• Simple gate drive requirements with a standard gate threshold voltage.
• Robust performance under avalanche conditions.
• Reduced switching losses due to low gate charge.

Additional Details

The K80A08K3 is available in a TO-220 package. It features a trench gate structure, which contributes to its low on-resistance and fast switching speed. The MOSFET is designed to operate over a wide temperature range. The device is RoHS compliant and lead-free. This MOSFET is suitable for use in synchronous rectification, power inverters, and other high-performance switching applications. Its low on-resistance allows for efficient power conversion, reducing heat dissipation and improving overall system efficiency.