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Same model may have multiple batches, images only for reference.
RN1101MFV(TPL3)
Same model may have multiple batches, images only for reference.

RN1101MFV(TPL3)

Part No RN1101MFV(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans Digital BJT NPN 50V 100mA 3-Pin VESM T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOT-723
Collector Emitter Breakdown Voltage 50 V
Collector Emitter Saturation Voltage 300 mV
Collector Emitter Voltage (VCEO) 50 V
Continuous Collector Current 100 mA
Element Configuration Single
Emitter Base Voltage (VEBO) 10 V
Height 500 µm
hFE Min 30
Length 1.2 mm
Max Collector Current 100 mA
Maximum Operating Temperature 150 °C
Max Power Dissipation 150 mW
Mount Surface Mount
Number of Pins 3
Packaging Tape & Reel (TR)
Polarity NPN
Power Dissipation 150 mW
Radiation Hardening No
RoHS Compliant
Width 800 µm
Win Source Part Number 1088701-RN1101MFV(TPL3)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian RN1101MFV(TPL3) CAD Model

Description

The Toshiba Semiconductor and Storage RN1101MFV(TPL3) is an NPN RF transistor that comes in tape and reel packaging.

  • Packaging: Tape and Reel (TR)
  • Power - Max: 150 mW
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Popularity: Low
  • Fake Threat In Open Market: 54 percent
  • Supply and Demand Status: Shortage
  • Transistor Type: NPN
  • Configuration: Single
  • Vce(sat) (Max) @ Ib, Ic: 300 mV
  • Collector Cutoff Current: 100 mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30

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