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RN1102FT TE85L

Part No RN1102FT TE85L
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Category Discrete Semiconductor Products
Family Transistors(BJT) - Single,Pre - Biased
Win Source Part Number 183542-RN1102FT TE85L
Popularity Low
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1102FT TE85L CAD Model

Description

The RN1102FT TE85L is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It's designed for high-frequency amplification and switching applications. Key features include a low collector-emitter saturation voltage and high transition frequency, making it suitable for use in RF and high-speed digital circuits. The 'FT' likely signifies specific performance characteristics, potentially including enhanced gain or lower noise, and the TE85L suffix indicates the specific taping and reel packaging for automated assembly.

Applications:

  • High-frequency amplifiers: Used in RF amplifiers for communication devices and instrumentation.
  • Oscillators: Employed in oscillator circuits to generate stable signals at various frequencies.
  • Mixers: Utilized in mixer circuits to convert signals from one frequency to another.
  • Switching circuits: Used as a switch in high-speed digital circuits and power supplies.
  • Small signal amplification: Employed in preamplifiers and signal conditioning circuits.

Features:

  • Low collector-emitter saturation voltage: Minimizes power dissipation in switching applications.
  • High transition frequency: Enables high-speed operation in RF and digital circuits.
  • Small signal current gain (hFE): Provides sufficient gain for amplification purposes.
  • Epitaxial planar structure: Offers improved performance and reliability.
  • Surface mount package: Allows for automated assembly and compact designs.

Benefits:

  • Efficient switching: Low saturation voltage reduces power loss and improves efficiency.
  • High-speed performance: High transition frequency enables operation in high-frequency circuits.
  • Stable operation: Epitaxial planar structure ensures stable and reliable performance.
  • Compact design: Surface mount package allows for space-saving designs.
  • Easy assembly: Surface mount package simplifies manufacturing processes.

Additional Details:

The RN1102FT TE85L typically features a collector-emitter voltage (VCEO) of 50V, a collector current (IC) of 150mA, and a power dissipation (PC) of 150mW. The transition frequency (fT) is around 300 MHz. It is housed in a small surface mount package, such as a SOT-23 or similar, facilitating high-density mounting on PCBs. The 'FT' likely denotes enhanced characteristics compared to the base RN1102, such as improved gain or lower noise figure. The TE85L suffix describes the specific taping and reel configuration for automated assembly. This device is suitable for applications requiring efficient, high-speed, and reliable performance, such as portable devices and wireless communication systems.

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