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RN1108CT(TPL3)

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Part No	RN1108CT(TPL3)
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors (BJT) - Single, Pre - Biased
Description	TRANS PREBIAS NPN 0.05W CST3
Datasheet	RN1108CT(TPL3) Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Toshiba Semiconductor and Storage
Packaging	Reel - TR
Status	Obsolete(EOL)
Transistor Polarity	NPN - Pre-Biased
Maximum Current Collector	50mA
VCEO Maximum Collector-Emitter Breakdown Voltage	20V
Resistor - Base (R1) (Ohms)	22k
Resistor - Emitter Base (R2) (Ohms)	47k
Typical Gain (hFE) (Min)	120 @ 10mA, 5V
Max Vce (sat)	150mV @ 250μA, 5mA
Collector Cut-off Current(Max)	500nA
Maximum Power Dissipation	50mW
Mounting	SMD (SMT)
Case / Package	CST3
Win Source Part Number	098317-RN1108CT(TPL3)
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian RN1108CT(TPL3) CAD Model

Alternative Products

Description

This NPN pre-biased transistor is a part of the Discrete Semiconductor Products category and is manufactured by Toshiba Semiconductor and Storage.

Package: reel-TR
Mounting Technology: SMD (SMT)
Maximum Current Collector: 50mA
Maximum Collector-Emitter Breakdown Voltage: 20V
Collector Cut-off Current: 500nA
Typical Gain (hFE): 120 @ 10mA, 5V
Maximum Power Dissipation: 50mW
Supply and demand: sufficient
Status: obsolete (EOL)

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