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DCX114TU-7-F

Part No DCX114TU-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS NPN/PNP SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Typical Gain (hFE) (Min) 100 @ 1mA, 5V
Max Vce (sat) 300mV @ 100μA, 1mA
Frequency - Transition 250MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package SOT-363
Win Source Part Number 108800-DCX114TU-7-F
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DCX114TU-7-F CAD Model

Description

Introducing the DCX114TU-7-F Bipolar Transistor from Diodes Incorporated

The DCX114TU-7-F is a cutting-edge bipolar (BJT) transistor developed by Diodes Incorporated, designed to offer high performance in a wide array of electronic applications. This product stands out for its compact size, energy efficiency, and reliability, making it a preferred choice for designers and engineers.

Key Features

  • Transistor Type: The DCX114TU-7-F is a PNP type bipolar junction transistor, which is commonly used for amplification and switching purposes.
  • Configuration: It comes in a dual configuration, providing two independent PNP transistors in a single package for space-saving and reduced component count.
  • Package: Housed in a SOT-323 package, the DCX114TU-7-F is ideal for surface-mount technology (SMT), allowing for efficient assembly and miniaturization of electronic circuits.
  • Power Dissipation: With a power dissipation of 150mW, this transistor can handle moderate levels of power, suitable for a variety of low-power applications.
  • Collector-Emitter Voltage: It supports a collector-emitter voltage (Vceo) of -50V, providing a good range for various electronic designs.
  • Current Rating: The continuous collector current (Ic) is rated at -100mA, ensuring it can control a good amount of current for signal processing or power management tasks.
  • DC Current Gain: The transistor exhibits a DC current gain (hFE) range from 100 to 600, ensuring efficient current amplification.

Applications

The DCX114TU-7-F is versatile and can be used in a wide variety of applications. Its typical uses include, but are not limited to:

  • Signal amplification in audio and video equipment
  • Driver stages in power amplifiers
  • Switching circuits in consumer electronics
  • Power management modules
  • Linear amplification in communication devices

Diodes Incorporated's commitment to quality ensures that the DCX114TU-7-F meets the highest standards of performance and reliability. Whether you are working on a simple project or an advanced electronic system, the DCX114TU-7-F offers the functionality and efficiency needed for a successful design.

For detailed specifications and application notes, engineers and designers are encouraged to consult the official datasheet provided by Diodes Incorporated.

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Pricing & Ordering

Quantity Unit Price Ext. Price
480+ $0.1048 $50.3040
1,165+ $0.0860 $100.1900
1,805+ $0.0833 $150.3565
2,485+ $0.0806 $200.2910
3,210+ $0.0780 $250.3800
4,295+ $0.0699 $300.2205
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 480 pcs
Order Increment : 1 pcs
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