The Toshiba Semiconductor and Storage 098784-RN1404S,LF is a high-performance NPN transistor that is pre-biased.

• It is suitable for use in a: wide range of electronic applications, including discrete semiconductor products.
• The transistor has a: maximum current collector of 100mA and a maximum collector-emitter breakdown voltage of 50V.
• The maximum power dissipation of the transistor is: 200mW.
• It has a: typical gain of 80 @ 10mA and 5V.
• The transistor has a: low collector-emitter saturation voltage of 300mV @ 250μA and 5mA.
• The transistor has a: collector cut-off current of 500nA.
• The transistor is available in the: S-Mini case/package and is mounted using SMD (SMT) technology.
• The frequency transition of the transistor is: 250MHz, and it has base and emitter-base resistors of 47k ohms.