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2SD1160-Y

Part No 2SD1160-Y
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description Silicon NPN Epitaxial Type (PCT Process)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 157578-2SD1160-Y
Popularity Low
Supply and Demand Status Limited
Family Name 2SD1160
Introduction Date June 16, 1999
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SD1160-Y CAD Model

Description

Product Overview

The 2SD1160-Y is a high-voltage, high-current NPN transistor, suitable for applications requiring heavy-duty switching capabilities. Its design and capabilities make it an exceptional component for use in high-power and high-efficiency electronic systems.

Applications and Projects

  • Uninterruptible Power Supplies (UPS)
  • Industrial Control Systems
  • High-Fidelity Audio Amplifiers
  • Power Supply Regulators
  • Machinery Drive Circuits

Features and Benefits

  • Exceptional Saturation Characteristics: Allows for minimal energy loss even in demanding applications.
  • Robust High-Current Performance: Facilitates reliable power management in industrial circuits.
  • Stable Thermal Handling: Ensures consistent operation under thermal stress.
  • High Reliability: Endorsed for long-life cycles in mission-critical applications.

Additional Details

The 2SD1160-Y provides optimal performance for industries requiring rigorous power regulation and management, delivering efficiency and reliability. Its prowess in high-current applications makes it indispensable in circuits needing robust and consistent power flows, thus serving critical infrastructure and heavy-duty industrial applications effectively.

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Shipping Information

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