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Same model may have multiple batches, images only for reference.
RN1102MFV(TPL3)
Same model may have multiple batches, images only for reference.

RN1102MFV(TPL3)

Part No RN1102MFV(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans Digital BJT NPN 50V 100mA 3-Pin VESM T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Collector Emitter Saturation Voltage 300 mV
Collector Emitter Voltage (VCEO) 50 V
Continuous Collector Current 100 mA
Element Configuration Single
Emitter Base Voltage (VEBO) 10 V
Height 500 µm
hFE Min 50
Length 1.2 mm
Max Collector Current 100 mA
Maximum Operating Temperature 150 °C
Mount Surface Mount
Number of Pins 3
Polarity NPN
Power Dissipation 150 mW
Radiation Hardening No
RoHS Compliant
Width 800 µm
Win Source Part Number 1088702-RN1102MFV(TPL3)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian RN1102MFV(TPL3) CAD Model

Description

The RN1102MFV(TPL3) is a surface mount, single NPN transistor component manufactured by Toshiba Semiconductor and Storage. It has a length of 1.2 mm, a height of 500 µm, and a width of 800 µm.

  • Length: 1.2 mm
  • Height: 500 µm
  • Width: 800 µm
  • Category: RF Transistors(BJT)
  • RoHS: Compliant
  • Maximum Operating Temperature: 150 °C
  • Maximum Continuous Collector Current: 100 mA

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Pricing & Ordering

Quantity Unit Price Ext. Price
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1,590+ $0.0630 $100.1700
2,470+ $0.0608 $150.1760
3,540+ $0.0565 $200.0100
4,605+ $0.0543 $250.0515
5,750+ $0.0522 $300.1500
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Availability: 83,120 pieces
MOQ: 745 pcs
Order Increment : 1 pcs
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