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RN1103,LF(CT Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1103,LF(CT

Part No RN1103,LF(CT
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.1W SSM
Datasheet
RN1103,LF(CT Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 70 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package SSM
Win Source Part Number 1092449-RN1103,LF(CT
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1103,LF(CT CAD Model

Description

The RN1103,LF(CT) is a NPN - Pre-Biased transistor from Toshiba Semiconductor and Storage with a Maximum Current Collector of 100mA and VCEO Maximum Collector-Emitter Breakdown Voltage of 50V.

  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain (hFE) (Min): 70 @ 10mA, 5V
  • Maximum Power Dissipation: 100mW
  • Case/Package: SSM
  • Frequency-Transition: 250MHz
  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Suitable for: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.6455 $67.7775
245+ $0.5291 $129.6295
380+ $0.5135 $195.1300
525+ $0.4967 $260.7675
675+ $0.4799 $323.9325
905+ $0.4308 $389.8740
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Availability: 191,700 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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