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Same model may have multiple batches, images only for reference.
RN1104MFV,L3F Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1104MFV,L3F

Part No RN1104MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.15W VESM
Datasheet
RN1104MFV,L3F Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 500μA, 5mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package VESM
Win Source Part Number 097002-RN1104MFV,L3F
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 8k pcs
Ultra Librarian 3D Model Ultra Librarian RN1104MFV,L3F CAD Model

Description

Toshiba Semiconductor and Storage presents an active RN1104MFV,L3F NPN pre-biased transistor that has a maximum collector current of 100mA and a maximum collector-emitter breakdown voltage of 50V.

  • Package: VESM
  • Maximum Power Dissipation: 150mW
  • Typical Gain (hFE): 80 @ 10mA, 5V
  • Suitable for: discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
345+ $0.1686 $58.1670
835+ $0.1386 $115.7310
1,295+ $0.1340 $173.5300
1,790+ $0.1294 $231.6260
2,295+ $0.1259 $288.9405
3,095+ $0.1120 $346.6400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,000 pieces
MOQ: 345 pcs
Order Increment : 1 pcs
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