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Same model may have multiple batches, images only for reference.
RN1105 Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1105

Part No RN1105
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 50V 0.1W SSM
Datasheet
RN1105 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package SSM
Win Source Part Number 183555-RN1105
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1105 CAD Model

Description

The Toshiba RN1105 is an NPN pre-biased transistor designed for use in discrete semiconductor products.

  • Maximum Current Collector: 100mA
  • Maximum VCEO Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain (hFE): 80 @ 10mA and 5V
  • Maximum Power Dissipation: 100mW
  • Frequency-Transition: 250MHz
  • Package: reel - TR
  • Mounting Technology: SMD (SMT)
  • Low Collector Cut-Off Current: 500nA
  • Maximum Vce (sat): 300mV @ 250μA, 5mA
  • Resistor-Base (R1): 2.2k
  • Resistor-Emitter Base (R2): 47k
  • Case/Package: SSM
  • Status: active

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Pricing & Ordering

Quantity Unit Price Ext. Price
3,335+ $0.0173 $57.6955
8,335+ $0.0139 $115.8565
12,500+ $0.0139 $173.7500
16,670+ $0.0139 $231.7130
22,730+ $0.0127 $288.6710
30,000+ $0.0116 $348.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 23,700 pieces
MOQ: 3335 pcs
Order Increment : 1 pcs
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