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RN1114(T5L,F,T)

Name: RN1114(T5L,F,T)
Brand: Toshiba Semiconductor and Storage
SKU: 296919
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	RN1114(T5L,F,T)
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors (BJT) - Single, Pre - Biased
Description	TRANS PREBIAS NPN 0.1W SSM
Datasheet	RN1114(T5L,F,T) Datasheet
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Toshiba Semiconductor and Storage
Packaging	Reel - TR
Status	Active
Transistor Polarity	NPN - Pre-Biased
Maximum Current Collector	100mA
VCEO Maximum Collector-Emitter Breakdown Voltage	50V
Resistor - Base (R1) (Ohms)	1k
Resistor - Emitter Base (R2) (Ohms)	10k
Typical Gain (hFE) (Min)	50 @ 10mA, 5V
Max Vce (sat)	300mV @ 250μA, 5mA
Collector Cut-off Current(Max)	500nA
Frequency - Transition	250MHz
Maximum Power Dissipation	100mW
Mounting	SMD (SMT)
Case / Package	SSM
Win Source Part Number	107058-RN1114(T5L,F,T)
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian RN1114(T5L,F,T) CAD Model

Alternative Products

Description

The Toshiba RN1114(T5L,F,T) is an NPN pre-biased transistor that comes with an SSM case/package.

Designed for: Use in discrete semiconductor products
Maximum Collector Current: 100mA
Collector-Emitter Breakdown Voltage: 50V
Maximum Vce(sat): 300mV @ 250μA, 5mA
Typical Gain (hFE): 50 @ 10mA, 5V
Maximum Power Dissipation: 100mW

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