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Same model may have multiple batches, images only for reference.
RN1117MFV,L3F Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1117MFV,L3F

Part No RN1117MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS NPN PREBIAS 50V 100MA VESM
Datasheet
RN1117MFV,L3F Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 30 @ 10mA, 5V
Max Vce (sat) 300mV @ 500μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package VESM
Win Source Part Number 1092458-RN1117MFV,L3F
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1117MFV,L3F CAD Model

Description

The Toshiba Semiconductor and Storage RN1117MFV,L3F is an NPN - Pre-Biased transistor designed for discrete semiconductor products.

  • Frequency - Transition: 250MHz
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Max Vce (sat): 300mV @ 500μA, 5mA
  • Collector Cut-Off Current(max): 500nA
  • Typical Gain (hFE) (Min): 30 @ 10mA, 5V
  • Maximum Power Dissipation: 150mW

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