The Toshiba Semiconductor and Storage RN1130MFV is a silicon NPN epitaxial planar transistor designed for high-frequency amplification and switching applications. This transistor is housed in a small surface-mount package, making it suitable for compact electronic devices. It features low collector-emitter saturation voltage and high current gain, ensuring efficient and reliable performance.

Applications

• High-frequency amplifiers
• Oscillators
• Mixers
• Switching circuits
• Portable electronic devices

Features

• NPN silicon epitaxial planar transistor
• High-frequency performance
• Low collector-emitter saturation voltage
• High current gain
• Small surface-mount package (SOT-23)
• RoHS compliant

Benefits

• Efficient Amplification: Provides high current gain for efficient signal amplification.
• Fast Switching: Enables rapid switching speeds in high-frequency circuits.
• Compact Design: Small package size allows for high-density circuit layouts.
• Low Power Consumption: Minimizes power dissipation, improving overall system efficiency.
• Reliable Performance: Ensures consistent and reliable operation in demanding applications.

Additional Details

The RN1130MFV is fabricated using Toshiba's advanced silicon epitaxial planar technology, ensuring high performance and reliability. Its low collector-emitter saturation voltage minimizes power loss and improves efficiency. The transistor's high current gain allows for efficient signal amplification in high-frequency circuits. It is commonly used in portable electronic devices, such as smartphones, tablets, and wireless communication equipment. The small SOT-23 package simplifies assembly and enables high-density board designs. Its RoHS compliance ensures that it meets environmental standards. The transistor's robust design and reliable performance make it suitable for a wide range of applications requiring high-frequency amplification and switching.