The Toshiba Semiconductor and Storage 096114-RN1405S,LF is a discrete semiconductor product that operates on NPN - Pre-Biased transistor polarity.

• It has a: maximum collector current of 100mA and a collector-emitter breakdown voltage of 50V.
• It has a: typical gain of 80 @ 10mA and 5V, and a maximum power dissipation of 200mW.
• The transistor is packaged in an: S-Mini case and is mounted on a surface-mount device.
• It has a: frequency transition of 250MHz and a maximum collector cut-off current of 500nA.
• The resistor base and emitter base are: 2.2k and 47k ohms, respectively.
• The Toshiba Semiconductor and Storage 096114-RN1405S,LF is an: active product that is sufficient in supply and demand.