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Same model may have multiple batches, images only for reference.
RN1442ATE85LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1442ATE85LF

Part No RN1442ATE85LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.2W S-MINI
Datasheet
RN1442ATE85LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 300mA
VCEO Maximum Collector-Emitter Breakdown Voltage 20V
Resistor - Base (R1) (Ohms) 10k
Typical Gain (hFE) (Min) 200 @ 4mA, 2V
Max Vce (sat) 100mV @ 3mA, 30mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 30MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package S-Mini
Win Source Part Number 114031-RN1442ATE85LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1442ATE85LF CAD Model

Description

The RN1442ATE85LF transistor from Toshiba Semiconductor and Storage is a pre-biased NPN transistor that is designed to be used in a variety of applications.

  • Lifecycle Status: Obsolete (EOL)
  • Popularity Rating: Medium
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 20V
  • Current - Collector (Max): 300mA
  • Recommendation: Purchase this product from a trusted supplier to ensure the authenticity of the product.

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95+ $1.2162 $115.5390
150+ $1.1781 $176.7150
205+ $1.1400 $233.7000
265+ $1.1030 $292.2950
355+ $0.9887 $350.9885
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