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Same model may have multiple batches, images only for reference.
RN1421TE85LF Real Image
Same model may have multiple batches, images only for reference.

RN1421TE85LF

Part No RN1421TE85LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 200MW SMINI
Datasheet
RN1421TE85LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 1k
Resistor - Emitter Base (R2) (Ohms) 1k
Typical Gain (hFE) (Min) 60 @ 100mA, 1V
Max Vce (sat) 250mV @ 2mA, 50mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 300MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package S-Mini
Win Source Part Number 1092467-RN1421TE85LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1421TE85LF CAD Model

Description

The Toshiba Semiconductor and Storage RN1421TE85LF is a discrete semiconductor product with an NPN transistor polarity.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Polarity: NPN
  • Feature: Pre-Biased
  • Maximum Current Collector: 800mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 200mW
  • Package: S-Mini
  • Typical Gain (hFE): 60 @ 100mA, 1V
  • Supply and Demand Status: Sufficient

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